incident energy meaning in Chinese
入射能
Examples
- The cross sections for these fusion reactions are appreciable only for incident energies above 10 kev .
只有当入射能量超过10千电子伏时，这些聚变反应的截面才是可观的。 - In the reaction processes of light nucleus the pre - equilibrium emissions dominate the reactions mechanism , while the equilibrium state only gives lightly implement even at low neutron incident energies
在轻核反应过程中，预平衡发射在反映机制中占主导地位，平衡态贡献小。 - An important relationship among the mean incident energy , reflective energy and the wall boundary heat flux is obtained by statistically averaging the energy values of those molecules colliding with wall
通过对与边界发生碰撞的分子进行统计平均，得到了分子反射能量与入射能量以及边界热流密度的关系式。 - Imev and the data in which the energy respectively is 166mev 139mev , 104mev , 90mev . on the basis of two wave functions and two optical potentials above mentioned , we have investigated a serie s of knockout reactions : through the comparing of two wave functions and two optical potentials , we find that two a cluster relative vave functions which contribute to the energy sharing results of the reaction sections are very well , especially for the ; that the received spectroscopic factors used vfm ( r ) are better than that used ; that the former not only suits to the elastic scatterings but also to the knockout reactions ; that the a cluster of knockout reactions are its local behaviors of surface . and we further testify that the distorted influences are not neglected if the incidence energies are not very high , but can be used the plane wave impulse approximate method and neglect the effects of the distorted influences if the incident energies are high enough
在利用上述的两种束缚态波函数和两种光学势的基础上，我们研究了一系列的敲出反应：通过对比两种束缚态波函数和光学势，我们得到的结论是：两种束缚态波函数和光学势对反应截面的能量分配谱的贡献都比较好，但尤以波函数_ ( li ) ( r )为佳；光学势v _ ( clu ) + ( r )得到的光谱因子比用woods - saxon势v _ ( ws ) ( r )的结果要好，它不仅能适用于弹性散射，且对敲出反应也能得出比较好的结果；集团的敲出反应是集团表面局域性的表现：在中低能的入射条件下，扭曲效应不能忽略，但入射能量较高时，扭曲效应影响较小，可以用平面波冲量近似的方法。 - Ii ) energies of the sputtered atoms vary mainly from several to several teens ev , with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally , and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions , but the angular distributions are not influenced by the incident energy very greatly
Ii )溅射原子的能量一般集中在几个到十几个电子伏特的范围内，在高能量区域也有所分布，但数量很少;溅射原子的出射位置就在离子入射位置的附近(埃数量级) ;溅射原子的角度在垂直方向和斜射方向都有所分布，但以垂直出射为主;溅射原子的能量、角度分布受到了入射离子能量、角度的影响，但入射离子能量对溅射原子的出射角影响不大。